The ELMOS answer to the increasing need for robust, high temperature automotive systems-on-chip is the SOI-technology. The process is best suited for large-scale integrated systems. ELMOS’ SOI-technology is targeting junction temperatures up to +200°C. Each separate device can be produced in its own separate silicon island to prevent latch up problems, parasitic devices like thyristors or transistors and capacitors between drain and source in the substrate.

Customer benefits

  • High integration of power semiconductor devices, analogue building blocks, digital building blocks
  • Excellent robustness against high temperature, against leakage currents, against latch-up
  • Modular approach = base process compatibility
  • Increased design flexibility, multipotential, multi ground substrate current free integrated diodes etc.
  • MEMS technology access, surface micromechanics, membrane and meander techniques